Ngomhla we-13 kuSeptemba, i-2024, i-Resonac ibhengeze ukwakhiwa kwesakhiwo esitsha semveliso ye-SiC (i-silicon carbide) ii-wafers ze-semiconductors zamandla kwi-Yamagata Plant kwisiXeko sase-Higashine, e-Yamagata Prefecture. Ukugqitywa kulindeleke kwikota yesithathu ka-2025.
Isibonelelo esitsha siya kufakwa ngaphakathi kwe-Yamagata Plant ye-subsidiary yayo, i-Resonac Hard Disk, kwaye iya kuba nommandla wokwakha we-5,832 square metres. Iya kuvelisa ii-wafers ze-SiC (i-substrates kunye ne-epitaxy). NgoJuni ka-2023, iResonac ifumene isatifikethi kuMphathiswa wezoQoqosho, uRhwebo kunye noShishino njengenxalenye yesicwangciso soqinisekiso lobonelelo ngezinto ezibalulekileyo ezichongwe phantsi koMthetho wokuKhuthaza uKhuseleko lwezoQoqosho, ngokukodwa kwimathiriyeli ye-semiconductor (i-SiC wafers). Isicwangciso sesiqinisekiso sobonelelo esamkelwe liSebe lezoQoqosho, uRhwebo noShishino sifuna utyalo-mali lwe-30.9 yeebhiliyoni zeeyen ukomeleza umthamo wemveliso ye-SiC wafer kwiziseko zesiXeko sase-Oyama, kwiSithili saseTochigi; IsiXeko saseHikone, kwiSithili saseShiga; IsiXeko saseHigashine, kwiSithili saseYamagata; kunye ne-Ichihara City, Chiba Prefecture, kunye nenkxaso-mali ukuya kwi-10.3 yeebhiliyoni zeeyen.
Isicwangciso kukuqalisa ukubonelela ngee-wafers ze-SiC (ii-substrates) kwisiXeko sase-Oyama, kwisiXeko sase-Hikone, nakwiSixeko sase-Higashine ngo-Epreli wama-2027, ngomthamo wemveliso yonyaka wamaqhekeza angama-117,000 (okulingana nee-intshi ezi-6). Unikezelo lwe-SiC epitaxial wafers kwi-Ichihara City kunye ne-Higashine City icwangciselwe ukuqala ngoMeyi 2027, kunye nomthamo olindelekileyo wonyaka wamaqhekeza angama-288,000 (ongatshintshiyo).
Ngomhla we-12 kuSeptemba 2024, inkampani yabamba umsitho wesiseko kwindawo yokwakha ecwangcisiweyo kwi-Yamagata Plant.
Ixesha lokuposa: Sep-16-2024