Ngomhla we-13 kuSeptemba, ngo-2024, iResonac yabhengeza ukwakhiwa kwesakhiwo esitsha semveliso yee-wafers zeSiC (silicon carbide) zee-semiconductors zamandla kwiYamagata Plant yayo eHigashine City, kwiYamagata Prefecture. Kulindeleke ukuba ukugqitywa kugqitywe kwikota yesithathu ka-2025.
Esi sakhiwo sitsha siza kuba ngaphakathi kwiYamagata Plant yenkampani engaphantsi kwayo, iResonac Hard Disk, kwaye siza kuba nendawo yokwakha eyi-5,832 square metres. Siza kuvelisa ii-SiC wafers (ii-substrates kunye ne-epitaxy). NgoJuni ka-2023, iResonac yafumana isatifikethi esivela kwiSebe lezoQoqosho, uRhwebo kunye noShishino njengenxalenye yesicwangciso sokuqinisekisa ukunikezelwa kwezixhobo ezibalulekileyo ezichongiweyo phantsi koMthetho wokuKhuthazwa koKhuseleko loQoqosho, ngokukodwa izixhobo ze-semiconductor (ii-SiC wafers). Isicwangciso sokuqinisekisa ukunikezelwa kwezixhobo esivunyiweyo yiSebe lezoQoqosho, uRhwebo kunye noShishino sifuna utyalo-mali lwe-30.9 yeebhiliyoni zeerandi ye-yen ukuqinisa amandla okuvelisa ii-SiC wafer kwiziseko ezise-Oyama City, eTochigi Prefecture; eHikone City, eShiga Prefecture; eHigashine City, eYamagata Prefecture; kunye neIchihara City, eChiba Prefecture, ngenkxaso-mali efikelela kwi-10.3 yeebhiliyoni zeerandi ye-yen.
Isicwangciso kukuqala ukubonelela ngee-wafers zeSiC (iisubstrates) kwi-Oyama City, kwiHikone City, nakwiHigashine City ngo-Epreli 2027, ezinomthamo wokuvelisa ngonyaka weengcezu ezili-117,000 (ezilingana nee-intshi ezi-6). Ukunikezelwa kwee-wafers zeSiC epitaxial kwi-Ichihara City nakwiHigashine City kucwangciselwe ukuqala ngoMeyi 2027, ngomthamo wonyaka olindelekileyo weengcezu ezingama-288,000 (ezingatshintshwanga).
Ngomhla we-12 kweyoMsintsi ngo-2024, inkampani yabamba umsitho wokwakha ngokutsha kwindawo yokwakha eyayicwangcisiwe kwiYamagata Plant.
Ixesha leposi: Sep-16-2024