Iindaba zeShishini: Itekhnoloji ye-IVWorks'reGaN ivumela i-742GHz GaN HEMT yokuqala

Umfanekiso: Injineli ye-IVWorks ilinganisa umthombo we-plasma ukuze usetyenziswe kwinkqubo ye-Hybrid MBE ekumgangatho wemveliso, exhasa ukukhula kwe-epitaxial ye-GaN ehambelanayo kunye nomgangatho ophezulu.

I-transistor ye-gallium nitride (GaN) ene-electron-mobility ephezulu (HEMT) equka itekhnoloji yokukhulisa kwakhona ye-reGaN ekhethiweyo ye-IVWorks Co Ltd yaseDaejeon, uMzantsi Korea ube yi-transistor yokuqala ye-GaN kwihlabathi liphela ukufikelela kwi-frequency ephezulu ye-oscillation (f)._ubuninzi) idlula i-700GHz. Oku kubonakaliswe ngesixhobo se-45nm GaN HEMT esakhiwe liqela lophando likaprofesa uDae-hyun Kim kwiSikolo soBunjineli be-Electronics kwiYunivesithi yeSizwe yaseKyungpook kwaye satyhilwa nge-18 kaJuni kwi-2026 IEEE/JSAP Symposium kwi-VLSI Technology & Circuits eHonolulu, eHawaii, e-USA.

Iqela lophando lenze i-transistor yeGaN enobude besango obuyi-45nm kwaye lafumana irekhodi eliphezulu_ubuninziye-742GHz, nto leyo emisela umlinganiselo omtsha wokusebenza kwe-RF kwitekhnoloji ye-transistor ye-GaN. Esi sixhobo sikwafumene irekhoda ye-frequency metric (favg) eyi-497GHz, ixabiso eliphezulu elixeliweyo ukuza kuthi ga ngoku kuyo nayiphi na itekhnoloji ye-transistor ye-GaN. Ezi ziphumo zibonisa ukuba ii-semiconductors ze-GaN zinokhuphiswano olwaneleyo lokusebenza nokuba kukwi-ultra-high-frequency regime kwaye zinokusebenza njengeqonga elifanelekileyo kwiinkqubo ze-elektroniki ze-sub-terahertz kunye ne-terahertz ezizayo, itsho i-IVWorks.

Ngelixa ii-transistors ezisekelwe kwi-indium phosphide (InP) bezisoloko zilawula ulawulo lwe-sub-terahertz frequency ngenxa yeempawu zazo zothutho olukhethekileyo lwee-electron, i-voltage yazo ephantsi yokuqhekeka ithintela amandla okukhupha kunye nokukhula kwenkqubo. Ngokwahlukileyo koko, i-GaN inikezela ngomxube owahlukileyo wentsimi yombane eqhekeka kakhulu, uxinano lwamandla aphezulu, kunye nokuqina kobushushu obuhle, okubenza babe ngabaviwa abanomtsalane kwizicelo zesizukulwana esilandelayo ze-high-frequency kunye namandla aphezulu. Nangona kunjalo, ukufikelela ekusebenzeni kwe-ultra-high-frequency nge-GaN kuhlale kungumngeni omkhulu. Ukoyisa le mida, iqela lophando lisebenzise inkqubo yesango ye-45nm ephucukileyo kunye noyilo lwesixhobo oluphuculweyo ukuze kuphuculwe ukusebenza kwe-high-frequency.

Eyona nto iphambili yayilubuchwepheshe bokukhulisa ngokutsha obukhethiweyo be-IVWorks be-reGaN. Yaphuhliswa yi-IVWorks kuphela, i-reGaN ikhulisa ngokutsha ngokukhetha i-GaN enohlobo lwe-n oluxutywe kakhulu kwiindawo zomthombo kunye ne-drain, nto leyo enciphisa kakhulu ukumelana nokuqhagamshelana. Njengeqabane elisebenzisanayo kolu phononongo, i-IVWorks ibonise oko kuthiwa kukufana okugqwesileyo kwenkqubo kuyo yonke i-wafer ye-intshi ezi-4 kwaye yafumana ukuphinda kuphindaphindwe okugqwesileyo. Ngaphezu koko, inkampani inciphise ukumelana nokukhula kwakhona kojongano (R)._int) ukuya kwi-0.027Ω-mm, isondela kumda wethiyori onokufikelelwa kuxinzelelo oluhambelanayo lomthwali.

“Olu phando lutyhala imida yokusebenza kwe-RF ye-GaN HEMTs kwinqanaba elitsha kwaye lubonisa amandla e-GaN semiconductors kwizicelo ze-ultra-high-frequency ngomboniso wokuqala wehlabathi we-GaN HEMT ene-h engaphezulu kwe-700GHz,” utshilo unjingalwazi uDae-hyun Kim. “Olu phando lunentsingiselo ngakumbi njengomzekelo ophumeleleyo wentsebenziswano phakathi kweshishini nezemfundo, edibanisa ukukhula okuphambili kwe-epitaxial kunye nobuchwepheshe bokukhula kwakhona obuvela kushishino kunye nobuchule beyunivesithi kuphando lwezixhobo kunye neesekethe,” wongeza.

"Ukwakhela phezu kwale mpumelelo, siceba ukukhawulezisa ngakumbi uphuhliso lwezixhobo ze-elektroniki ze-GaN zesizukulwana esilandelayo ezijolise kwizicelo ze-terahertz-frequency zonxibelelwano lwe-6G kunye nobuchwepheshe bokuzikhusela obuphambili."

I-IVWorks ithi le mpumelelo igxininisa ngakumbi amandla akhulayo etekhnoloji yeGaN okwandisa ngaphaya kweRF yendabuko kunye namandla e-elektroniki ukuya kwizicelo ezintsha ze-sub-terahertz kunye ne-terahertz, kubandakanya unxibelelwano lwe-6G, iinkqubo ze-radar eziphambili, unxibelelwano lwesathelayithi, kunye ne-elektroniki yokuzikhusela yesizukulwana esilandelayo.

“I-reGaN yiteknoloji ephambili esele iphumelele isiqinisekiso somgangatho kwifektri enkulu kwaye yamkelwe kwimveliso yomthamo,” utshilo i-CEO ye-IVWorks uYoung-kyun Noh. “Le mpumelelo ibonisa ukuba iqonga lethu le-reGaN elisekelwe kwi-Hybrid-MBE alilungelanga nje kuphela ukuvelisa kodwa likwayiteknoloji ebalulekileyo evumela isizukulwana esilandelayo se-sub-terahertz kunye ne-terahertz GaN electronics,” wongeza. “Siyaziqhenya ngokubona iteknoloji ye-IVWorks inegalelo kwinqanaba lophando eliphambili kwihlabathi.”